Samsung Electronics has developed a SSD with storage of up to 2 TB for autonomous driving vehicles.

The 256 GB AM9C1 SSD has 50% higher power efficiency than previous Samsung SSDs, with sequential read and write speeds of up to 4,400 MB/s and 400 MB/s, respectively.

The SSD is the first based on eighth-generation vertical NAND (V-NAND) with a PCIexpress 4.0 data interface. A 2 TB version should ship in early 2025.

The SSD uses a triple-level cell (TLC) flash architecture, storing up to three bits per cell. But there is a single-level cell (SLC) option called Namespace that boosts read and write speeds to 4,700 MB/s and 1,400 MB/s, respectively. This has higher reliability, but cuts density by a third.

The SSD is qualified to the automotive quality standard AEC-Q100 Grade 2 for stable performance from -40 C to 105 C, working on ASPICE and ISO/SAE 21434 standard qualification.

“We are collaborating with global autonomous vehicle makers and providing high-performance, high-capacity automotive products,” said Hyunduk Cho, vice-president and head of the automotive group at Samsung Electronics’ Memory Business.